| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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43 pcs
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43 pcs | On Request | 1 | On Request | On Request | NO DC | On Request | On Request |
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| Drain to Source Voltage (Vdss) | |
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| Input Capacitance (Ciss) (Max) @ Vds | |
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| Rds On (Max) @ Id, Vgs | |
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| Vgs(th) (Max) @ Id |
The IRF7301TRPBF from Infineon Technologies is a dual N-Channel MOSFET array designed for a variety of switching and power management applications. This device integrates two independent N-channel MOSFETs in a single 8-SOIC package, enabling efficient space-saving designs on the PCB.
Key electrical specifications include a drain-to-source voltage (Vdss) of 20V, a continuous drain current (Id) of 5.2A, and a maximum on-resistance (Rds(on)) of 50mOhm at a gate voltage of 4.5V and drain current of 2.6A. The gate threshold voltage is 700mV maximum at 250µA, and the device exhibits a gate charge of 20nC at 4.5V, making it suitable for logic-level drive. The input capacitance is 660pF at 15V Vds. The MOSFETs are rated for a maximum power dissipation of 2W.
The device is fabricated using MOSFET (Metal Oxide) technology and features logic-level gate capability, allowing direct drive from low-voltage logic circuits. The operating temperature range extends from -55°C to 150°C, making it suitable for harsh environments. The package is the industry-standard 8-SOIC (0.154", 3.90mm Width) with a surface-mount mounting type, facilitating easy integration into automated assembly processes.
Common applications include load switching, DC-DC converters, battery management, and other power management circuits where dual N-channel MOSFETs are required. The dual configuration reduces component count and improves layout efficiency.
The drain-source voltage (Vdss) is 20V.
The device is available in an 8-SOIC (0.154", 3.90mm Width) surface-mount package.
The operating temperature range is -55°C to 150°C.
The device is indicated as RoHS3 Compliant, though this information is unverified.
The maximum gate charge is 20nC at Vgs=4.5V.
The maximum on-resistance is 50mOhm at Id=2.6A and Vgs=4.5V.
It is a dual N-channel MOSFET (2 N-Channel).