| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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15 pcs
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15 pcs | On Request | 1 | On Request | On Request | 301 | On Request | On Request |
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| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IRF730 is an N-Channel enhancement-mode power MOSFET designed for high-voltage switching applications. It features a drain-source voltage (Vdss) of 400V and continuous drain current ratings of 5.5A at Tc=25°C and 3.5A at Tc=100°C. The device has a maximum on-resistance of 1.0Ω at Vgs=10V and Id=3A, ensuring efficient power transfer.
This MOSFET exhibits fast switching characteristics with a total gate charge (Qg) of 38nC maximum at Vgs=10V, and typical gate-source charge (Qgs) of 5.7nC and gate-drain charge (Qgd) of 22nC. Input capacitance (Ciss) is 530pF maximum at Vds=25V. The device is rated for a maximum power dissipation of 74W at Tc=25°C, and can operate over a junction temperature range of -55°C to +150°C.
The IRF730 is available in the industry-standard TO-220AB through-hole package, which provides low thermal resistance and is suitable for commercial-industrial applications up to approximately 50W. The part is RoHS compliant and has a moisture sensitivity level (MSL) of 1, indicating unlimited floor life.
The maximum drain-source voltage (Vdss) is 400V.
The maximum continuous drain current at Tc=25°C is 5.5A.
The maximum on-resistance is 1.0Ω at Vgs=10V and Id=3A.
The operating junction temperature range is -55°C to +150°C.
It comes in a TO-220AB through-hole package.
Yes, the IRF730 is listed as RoHS3 compliant.