| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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34 pcs
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34 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
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| Operating Temperature | |
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| Rds On (Max) @ Id, Vgs | |
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| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IRF730 is a third-generation N-Channel power MOSFET from Vishay Siliconix, designed for high-voltage switching applications. It offers a maximum drain-source voltage of 400V and a continuous drain current of 5.5A at 25°C (3.5A at 100°C). The device features a low on-resistance of 1 Ohm (max) at Vgs=10V and Id=3.3A, ensuring efficient power handling.
Key electrical characteristics include a maximum gate charge of 38 nC at Vgs=10V, input capacitance of 700 pF at Vds=25V, and a gate threshold voltage of 4V (max) at Id=250µA. The MOSFET is avalanche rated with a single pulse avalanche energy of 290 mJ and repetitive avalanche current of 5.5A, providing ruggedness in inductive switching environments.
The IRF730 is housed in a through-hole TO-220-3 (TO-220AB) package, suitable for commercial and industrial applications with power dissipation up to 74W at 25°C case temperature. It operates over a junction temperature range of -55°C to 150°C. The device is RoHS3 compliant and has an MSL rating of 1 (unlimited).
-55°C to 150°C (junction temperature).
Yes, it is listed as RoHS3 Compliant.
TO-220-3 (TO-220AB).
400V.
5.5A.
38 nC maximum at Vgs=10V.
1 Ohm maximum at Id=3.3A, Vgs=10V.