| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
5,245 pcs
|
5245 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Lead Spacing | |
| Lead Style | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IRF7240PBF is a P-Channel MOSFET designed for power management applications. It features a maximum drain-to-source voltage of 40V and a continuous drain current of 10.5A at 25°C with a -10V gate drive. The device offers ultra-low on-resistance, with a maximum of 15mΩ at VGS=-10V and 25mΩ at VGS=-4.5V, enhancing efficiency in battery and load management circuits.
This MOSFET is built using advanced processing techniques from the HEXFET family, providing excellent switching performance. It has a total gate charge of 110nC maximum and an input capacitance of 9250pF at Vds=25V, making it suitable for high-frequency switching applications. The gate threshold voltage ranges from -1V to -3V, allowing logic-level drive.
The device is housed in an 8-SOIC package (0.154" width, 3.90mm) with surface mount mounting, ideal for compact PCB designs. It operates over a junction temperature range of -55°C to 150°C and has a maximum power dissipation of 2.5W at 25°C ambient. The package design enhances thermal characteristics and supports multiple-die capability for reduced board space.
The IRF7240PBF is lead-free and designed for vapor phase, infrared, or wave soldering. It is suitable for battery power management, load switching, DC-DC converters, and power distribution systems.
The maximum drain-source voltage is -40V.
At Ta=25°C with Vgs=-10V, the continuous drain current is 10.5A; at Ta=70°C it is 8.6A.
Maximum on-resistance is 15mΩ at Id=10.5A, Vgs=10V, and 25mΩ at Id=8.4A, Vgs=4.5V.
The operating junction temperature range is -55°C to 150°C.
It is available in an 8-SOIC (0.154", 3.90mm Width) package, also known as 8-SO.
The gate threshold voltage ranges from -1V (min) to -3V (max) at Id=250µA.
Yes, the datasheet states it is lead-free.