| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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12,000 pcs
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12000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IRF7210TRPBF is a P-Channel enhancement mode MOSFET from Infineon Technologies, part of the HEXFET family. It features a drain-source voltage of 12V and a continuous drain current of 16A at 25°C. The device achieves an ultra-low on-resistance of 7mOhm at VGS=-4.5V, making it highly efficient for power management applications.
This MOSFET is designed for surface mount assembly in an 8-SOIC package with a customized leadframe for enhanced thermal performance. It supports a gate threshold voltage of 0.6V and can handle pulsed drain currents up to 100A. The device operates over a junction temperature range of -55°C to 150°C.
Typical applications include battery management, load switching, and power distribution in portable and embedded systems. The part is available in tape and reel packaging for automated assembly.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.80 | $2.80 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage is 12V.
16A at 25°C ambient temperature, derated to 12A at 70°C.
7mOhm maximum at VGS=-4.5V and ID=-16A.
8-SOIC (0.154", 3.90mm Width) surface mount package.
-55°C to 150°C junction temperature.
Yes, it is listed as RoHS3 compliant.