| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,500 pcs
|
3500 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IRF7205PBF is a P-Channel enhancement-mode MOSFET manufactured by Infineon Technologies using MOSFET (Metal Oxide) technology. It is designed for switching and power management applications requiring a 30V drain-to-source voltage (Vdss) and a continuous drain current of 4.6A at 25°C ambient temperature.
The device features a maximum on-resistance (Rds(on)) of 70mOhm at a gate-source voltage of 10V and a drain current of 4.6A. The gate threshold voltage (Vgs(th)) is a maximum of 3V at 250µA drain current. For efficient switching, the total gate charge (Qg) is 40nC at Vgs = 10V, and the input capacitance (Ciss) is 870pF at Vds = 10V. The recommended drive voltages are 4.5V and 10V, with a maximum gate-source voltage rating of ±20V.
The IRF7205PBF is supplied in an 8-SOIC (0.154", 3.90mm Width) surface-mount package, also known as the supplier device package 8-SO. It is rated for a maximum power dissipation of 2.5W at case temperature (Tc) and operates over a junction temperature range of -55°C to 150°C.
The maximum drain-source voltage (Vdss) is 30 V.
The continuous drain current (Id) at 25°C ambient temperature is 4.6 A.
The maximum on-resistance (Rds(on)) is 70 mOhm at Id = 4.6 A and Vgs = 10 V.
The operating junction temperature range is -55°C to 150°C.
The IRF7205PBF is available in an 8-SOIC (0.154", 3.90mm Width) surface-mount package.
The maximum gate threshold voltage (Vgs(th)) is 3 V at Id = 250 µA.
The IRF7205PBF is listed as RoHS3 compliant, but this status is unverified.