| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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149 pcs
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149 pcs | On Request | 1 | On Request | On Request | 96P/ | On Request | On Request | |
|
93 pcs
|
93 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name |
The IRF7201 is an N-Channel HEXFET Power MOSFET manufactured by Vishay Dale. It utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area, combined with fast switching speeds and a ruggedized device design. This makes it an efficient and reliable component for various applications.
Key electrical specifications include a 30V drain-source breakdown voltage (VDS), a continuous drain current (ID) of 7.3A at 25°C, and a maximum on-resistance (RDS(on)) of 0.030 Ohm at VGS = 10V. The gate-to-source voltage (VGS) range is ±20V.
The device is housed in an SO-8 surface mount package, which has been modified with a customized leadframe for enhanced thermal characteristics. This package is suitable for vapor phase, infrared, or wave soldering techniques. The operating temperature range is -55°C to +150°C.
With its fast switching characteristics and robust design, the IRF7201 is suitable for a wide variety of power applications where efficiency and reliability are critical.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.67 | $1.67 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (VDS) for the IRF7201 is 30V.
The continuous drain current (ID) at TC = 25°C is 7.3A.
The maximum on-resistance (RDS(on)) is 0.03 Ohm at VGS = 10V.
The gate threshold voltage (VGS(th)) is a minimum of 1V.
The junction and storage temperature range is -55°C to +150°C.
The IRF7201 is available in an SO-8 surface mount package.
The RoHS status is RoHS3 Compliant.