IRF7201 N-Channel MOSFET with 30V drain-source voltage, 7.3A continuous drain current, and 30mΩ on-resistance. Surface mount in 8-SOIC package.
Mfr Part #:

IRF7201

Available from 1 distributors
Mfr Name: Infineon Technologies
Infineon Technologies
N-Channel MOSFET with 30V drain-source voltage, 7.3A continuous drain current, and 30mΩ on-resistance. Surface mount in 8-SOIC package.
✓ Total Stock: 3,000 pcs
$ Price Range: $2.51

IRF7201 Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
3,000 pcs
3000 pcs On Request 1 On Request On Request On Request On Request On Request

IRF7201 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Lead Style
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Tape & Reel
Technology
Termination Style
Vgs (Max)
Vgs(th) (Max) @ Id

IRF7201 Description

Short technical summary and product information.

The IRF7201 is an N-Channel MOSFET from Infineon Technologies, featuring Generation V HEXFET technology. It offers a drain-source voltage of 30V and a continuous drain current of 7.3A at Tc=25°C (5.8A at Tc=70°C). The maximum on-resistance is 30mΩ at Vgs=10V and Id=7.3A. Key electrical characteristics include a gate charge of 28nC at Vgs=10V and input capacitance of 550pF at Vds=25V. The device can handle pulsed drain currents up to 58A and a single-pulse avalanche energy of 70mJ. Maximum power dissipation is 2.5W at Tc=25°C, with a thermal resistance of 50°C/W junction-to-ambient. The 8-SOIC package is surface-mountable and available in tape and reel. This MOSFET is suitable for power management, DC-DC converters, and load switching applications. It is marked as lead-free and RoHS3 compliant (unverified), with MSL 1 and REACH unaffected.

IRF7201 Quick Information

Product Type: MOSFET
Series: HEXFET
Canonical Name: IRF7201 N-Channel MOSFET, 30V, 7.3A, 8-SOIC
Subcategory: Single MOSFET

IRF7201 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)
REACH Status: REACH Unaffected
Lead Free: Lead-Free

IRF7201 Estimated Pricing

Qty Low High
95+ $2.51 $2.51

Estimated market price range - modelled values for guidance only, not live distributor offers.

IRF7201 Features

  • Ultra-low on-resistance of 30 mΩ.
  • Rated for 30V drain-source voltage.
  • Continuous drain current up to 7.3A.
  • Surface mount 8-SOIC package.
  • Generation V HEXFET technology.

IRF7201 Applications

  • Power management in DC-DC converters.
  • Load switching in portable electronics.
  • Motor drive applications.
  • Battery protection circuits.

IRF7201 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage of the IRF7201?

30V.

What is the continuous drain current rating?

7.3A at Tc=25°C, 5.8A at Tc=70°C.

What is the on-resistance of the IRF7201?

Maximum 30mΩ at Id=7.3A, Vgs=10V.

What package is the IRF7201 available in?

8-SOIC (8-pin surface mount package).

Is the IRF7201 RoHS compliant?

Reported as RoHS3 compliant, but not verified against source document.

What is the gate charge of the IRF7201?

28nC at Vgs=10V.

What is the input capacitance?

550pF at Vds=25V.

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