| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,000 pcs
|
3000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Lead Style | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Termination Style | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IRF7201 is an N-Channel MOSFET from Infineon Technologies, featuring Generation V HEXFET technology. It offers a drain-source voltage of 30V and a continuous drain current of 7.3A at Tc=25°C (5.8A at Tc=70°C). The maximum on-resistance is 30mΩ at Vgs=10V and Id=7.3A. Key electrical characteristics include a gate charge of 28nC at Vgs=10V and input capacitance of 550pF at Vds=25V. The device can handle pulsed drain currents up to 58A and a single-pulse avalanche energy of 70mJ. Maximum power dissipation is 2.5W at Tc=25°C, with a thermal resistance of 50°C/W junction-to-ambient. The 8-SOIC package is surface-mountable and available in tape and reel. This MOSFET is suitable for power management, DC-DC converters, and load switching applications. It is marked as lead-free and RoHS3 compliant (unverified), with MSL 1 and REACH unaffected.
| Qty | Low | High |
|---|---|---|
| 95+ | $2.51 | $2.51 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
30V.
7.3A at Tc=25°C, 5.8A at Tc=70°C.
Maximum 30mΩ at Id=7.3A, Vgs=10V.
8-SOIC (8-pin surface mount package).
Reported as RoHS3 compliant, but not verified against source document.
28nC at Vgs=10V.
550pF at Vds=25V.