| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
16 pcs
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16 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Gate Charge | |
| Input Capacitance | |
| Mounting Type | |
| Tape & Reel |
The IRF720 is an N-Channel enhancement mode power field-effect transistor manufactured by HAR using proprietary planar DMOS technology. This technology is optimized to minimize on-state resistance, enhance switching performance, and provide robust high-energy pulse handling capabilities in avalanche and commutation modes.
Key electrical specifications include a maximum drain-source voltage (Vds) of 400V and a continuous drain current (Id) of 4.2A. The typical on-resistance (Rds(on)) is 1.75 Ohms at Vgs = 10V, with a maximum of 1.8 Ohms. It also features a low gate charge (Qg) of typically 14 nC and a typical input capacitance (Ciss) of 11 pF.
This MOSFET is designed for applications such as Switch Mode Power Supplies and Electronic Lamp Ballasts. Its fast switching characteristics and improved dv/dt capability make it suitable for demanding power applications. The device is packaged for through-hole mounting.
Environmental compliance includes RoHS3 compliance, Moisture Sensitivity Level 1, and REACH unaffected status, though these are currently unverified.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.67 | $1.67 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (Vds) of the IRF720 is 400V.
The IRF720 has a maximum continuous drain current of 4.2A.
The maximum gate-source voltage (Vgs) is 20V.
The typical on-resistance (Rds(on)) at Vgs = 10V is 1.75 Ohms.
The IRF720 is mounted using through-hole packaging.
The RoHS compliance status is unverified.