| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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20 pcs
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20 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
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| Input Capacitance (Ciss) (Max) @ Vds | |
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| Rds On (Max) @ Id, Vgs | |
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| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IRF720 is a third-generation N-Channel power MOSFET from Vishay, designed for fast switching and rugged performance in commercial and industrial applications. It offers a drain-source voltage rating of 400V and a continuous drain current of 3.3A at 25°C case temperature, with a maximum on-resistance of 1.8Ω at Vgs = 10V.
This device features dynamic dV/dt rating, repetitive avalanche capability, and simple gate drive requirements. The gate charge is 20 nC maximum, with typical gate-source charge of 3.3 nC and gate-drain charge of 11 nC. Input capacitance is 410 pF at Vds = 25V.
The IRF720 is supplied in the industry-standard TO-220AB through-hole package, which provides low thermal resistance and cost-effectiveness for power dissipation up to 50W. The operating junction temperature range is -55°C to +150°C.
The maximum drain-source voltage (Vds) is 400V.
The continuous drain current (Id) is 3.3A at Tc = 25°C.
The maximum drain-source on-resistance (Rds(on)) is 1.8Ω at Id = 2A and Vgs = 10V.
The IRF720 is available in the TO-220-3 (TO-220AB) through-hole package.
The operating junction temperature range is -55°C to +150°C.
The part is listed as RoHS3 Compliant, but this is unverified and there is a source conflict. Please confirm with the manufacturer.