| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
14,870 pcs
|
14870 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Lead Style | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
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| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IRF710PBF is an N-Channel enhancement-mode power MOSFET from Vishay Siliconix, designed for high-voltage switching applications. It features a drain-source voltage rating of 400V and a continuous drain current of 2A at 25°C case temperature, with a maximum on-resistance of 3.6 Ohms at 10V gate drive.
This third-generation MOSFET provides fast switching performance with a typical gate charge of 17 nC and low gate threshold voltage of 4V. It is avalanche-rated with a single pulse avalanche energy of 120 mJ, making it suitable for rugged industrial environments.
The device is housed in a TO-220AB through-hole package, offering low thermal resistance of 3.5°C/W junction-to-case and a maximum power dissipation of 36W at 25°C. The operating junction temperature range spans -55°C to 150°C.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.62 | $2.62 |
| 10+ | $1.69 | $1.69 |
| 50+ | $1.28 | $1.28 |
| 100+ | $1.15 | $1.15 |
| 500+ | $0.92 | $0.92 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source voltage rating is 400V.
The maximum continuous drain current is 2A at 25°C case temperature and 1.2A at 100°C.
The maximum drain-source on-resistance is 3.6 Ohms at Id = 1.2A and Vgs = 10V.
It comes in a TO-220-3 package with a TO-220AB supplier device package, through-hole mounting.
The operating junction temperature range is -55°C to 150°C.
Yes, it is RoHS3 compliant and lead (Pb)-free.
The maximum gate charge is 17 nC at Vgs = 10V, with typical gate-source charge of 3.4 nC and gate-drain charge of 8.5 nC.