| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
6,565 pcs
|
6565 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
4,000 pcs
|
4000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Drain to Source Voltage (Vdss) | |
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| Input Capacitance (Ciss) (Max) @ Vds | |
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| Vgs(th) (Max) @ Id |
The IRF7105TRPBF is a complementary N and P-Channel MOSFET array designed for low-voltage power switching applications. It offers a drain-source voltage rating of 25V and a maximum drain current of 3.5A for the N-Channel and 2.3A for the P-Channel. The on-resistance is typically 100 mOhm at Vgs=10V, ensuring efficient power handling.
With a maximum gate charge of 27 nC and an input capacitance of 330 pF, this MOSFET array is suitable for moderate-speed switching circuits. The maximum threshold voltage is 3V at 250 µA, allowing for logic-level drive compatibility. The device is housed in a compact 8-SOIC surface-mount package, ideal for space-constrained designs.
Operating over a junction temperature range of -55°C to 150°C, the IRF7105TRPBF can be used in a variety of environmental conditions. It is specified with a maximum power dissipation of 2W. Typical applications include power management, DC-DC converters, and load switching in battery-powered systems.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.96 | $0.96 |
| 10+ | $0.60 | $0.60 |
| 50+ | $0.44 | $0.44 |
| 100+ | $0.39 | $0.39 |
| 500+ | $0.30 | $0.30 |
| 4,000+ | $0.22 | $0.22 |
| 12,000+ | $0.20 | $0.20 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
25V.
8-SOIC (0.154", 3.90mm Width) surface-mount package.
-55°C to 150°C (junction).
It is listed as RoHS3 compliant, but this status is unverified (low confidence).
3.5A.
100 mOhm at 1A, 10V.
27 nC at 10V.