IRF7105TRPBF The IRF7105TRPBF is a 25V N and P-Channel MOSFET array from Infineon Technologies. It features a drain current of 3.5A (N-Channel) and 2.3A (P-Channel) with low on-resistance of 100 mOhm.
Mfr Part #:

IRF7105TRPBF

Available from 2 distributors
Mfr Name: Infineon Technologies
Infineon Technologies
The IRF7105TRPBF is a 25V N and P-Channel MOSFET array from Infineon Technologies. It features a drain current of 3.5A (N-Channel) and 2.3A (P-Channel) with low on-resistance of 100 mOhm.
✓ Total Stock: 10,565 pcs
$ Price Range: $0.20 - $0.96

IRF7105TRPBF Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
6,565 pcs
6565 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
4,000 pcs
4000 pcs On Request 1 On Request On Request On Request On Request On Request

IRF7105TRPBF Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Configuration
Current
Drain to Source Voltage (Vdss)
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Lead Style
Mounting Type
Operating Temperature
Power
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs(th) (Max) @ Id

IRF7105TRPBF Description

Short technical summary and product information.

The IRF7105TRPBF is a complementary N and P-Channel MOSFET array designed for low-voltage power switching applications. It offers a drain-source voltage rating of 25V and a maximum drain current of 3.5A for the N-Channel and 2.3A for the P-Channel. The on-resistance is typically 100 mOhm at Vgs=10V, ensuring efficient power handling.

 

With a maximum gate charge of 27 nC and an input capacitance of 330 pF, this MOSFET array is suitable for moderate-speed switching circuits. The maximum threshold voltage is 3V at 250 µA, allowing for logic-level drive compatibility. The device is housed in a compact 8-SOIC surface-mount package, ideal for space-constrained designs.

 

Operating over a junction temperature range of -55°C to 150°C, the IRF7105TRPBF can be used in a variety of environmental conditions. It is specified with a maximum power dissipation of 2W. Typical applications include power management, DC-DC converters, and load switching in battery-powered systems.

IRF7105TRPBF Quick Information

Product Type: MOSFET Array
Canonical Name: IRF7105TRPBF - N and P-Channel MOSFET Array
Subcategory: N and P-Channel MOSFET Array

IRF7105TRPBF Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

IRF7105TRPBF Estimated Pricing

Qty Low High
1+ $0.96 $0.96
10+ $0.60 $0.60
50+ $0.44 $0.44
100+ $0.39 $0.39
500+ $0.30 $0.30
4,000+ $0.22 $0.22
12,000+ $0.20 $0.20

Estimated market price range - modelled values for guidance only, not live distributor offers.

IRF7105TRPBF Features

  • N and P-Channel MOSFETs in one package.
  • 25V drain-source voltage rating.
  • 3.5A N-Channel and 2.3A P-Channel current.
  • Low on-resistance of 100 mOhm.
  • Surface-mount 8-SOIC package.

IRF7105TRPBF Applications

  • Suitable for load switching up to 3.5A.
  • Ideal for complementary MOSFET pair circuits.
  • Used in low-voltage power management designs.

IRF7105TRPBF FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating?

25V.

What is the package type?

8-SOIC (0.154", 3.90mm Width) surface-mount package.

What is the operating temperature range?

-55°C to 150°C (junction).

Is the component RoHS compliant?

It is listed as RoHS3 compliant, but this status is unverified (low confidence).

What is the maximum drain current for the N-Channel MOSFET?

3.5A.

What is the maximum on-resistance?

100 mOhm at 1A, 10V.

What is the maximum gate charge?

27 nC at 10V.

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