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IRF7104 The Vishay Dale IRF7104 is a dual P-Channel HEXFET Power MOSFET designed for efficient power applications. It features a low on-resistance and a compact SO-8 package.
Mfr Part #:

IRF7104

Available from 1 distributors
Mfr Name: Vishay
Vishay
The Vishay Dale IRF7104 is a dual P-Channel HEXFET Power MOSFET designed for efficient power applications. It features a low on-resistance and a compact SO-8 package.
✓ Total Stock: 1,984 pcs

IRF7104 Available from 1 distributor

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✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
PROSOFT ELECTRONICS ✓
Non-Authorised Inventory information
1,984 pcs
On Request
1984 pcs On Request 1 On Request On Request 9425P/ On Request On Request
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IRF7104 Specifications Quick View

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IRF7104 Description

Short technical summary and product information.

The Vishay Dale IRF7104 is a Fourth Generation HEXFET Power MOSFET utilizing advanced processing techniques for low on-resistance per silicon area. This dual P-Channel MOSFET is designed for efficiency in a variety of power applications.

 

Key electrical specifications include a Drain-to-Source Breakdown Voltage of -20V and a typical On-Resistance of 0.19Ω at VGS = -10V, ID = -1.0A. The continuous drain current is rated at -2.3A at 25°C ambient temperature.

 

Packaged in an SO-8 surface-mount package, the IRF7104 is suitable for wave, infra red, or vapor phase soldering. Its design is optimized for enhanced thermal characteristics, making it ideal for power applications where board space is a consideration. The device operates across a wide temperature range from -55°C to +150°C.

IRF7104 Quick Information

Product Type: MOSFET
Series: Fourth Generation HEXFET
Canonical Name: Dual P-Channel MOSFET
Subcategory: P-Channel

IRF7104 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

IRF7104 Features

  • P-Channel MOSFET with -20V drain-source breakdown voltage.
  • Continuous drain current rating of -2.3A at 25°C.
  • Low on-resistance of 0.19Ω typical at -10V gate drive.
  • Surface mount SO-8 package for compact designs.
  • Operating junction temperature range from -55°C to +150°C.

IRF7104 Applications

  • Ideal for load switching in battery-powered devices.
  • Used in DC-DC converter circuits requiring P-Channel switching.
  • Suitable for power management in portable electronics.
  • Applicable in reverse polarity protection circuits.

IRF7104 FAQs

6 frequently asked questions generated from this part’s specifications.
What is the drain-to-source breakdown voltage of the IRF7104?

-20V.

What is the continuous drain current rating?

-2.3A at 25°C ambient.

What is the typical on-resistance of the IRF7104?

0.19Ω at VGS = -10V.

What is the gate threshold voltage range?

-1V to -3V.

What is the package type of the IRF7104?

SO-8 surface mount package.

What is the operating junction temperature range?

-55°C to +150°C.

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