| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,500 pcs
|
2500 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
50 pcs
|
50 pcs | On Request | 1 | On Request | On Request | 2026-02-25 06:16:38 | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Configuration | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs(th) (Max) @ Id |
The IRF7103Q is a dual N-channel enhancement-mode MOSFET from Infineon Technologies, designed for general-purpose switching applications. It features a drain-source voltage rating of 50V and a continuous drain current of 3A, making it suitable for low-to-medium power circuits.
Key electrical characteristics include a maximum on-resistance of 130mΩ at Vgs=10V and Id=3A, a maximum gate threshold voltage of 3V at Id=250µA, and an input capacitance of 255pF at Vds=25V. The device is configured as two independent N-channel MOSFETs in a single package.
The IRF7103Q is housed in a standard 8-SOIC surface-mount package with a 3.90mm body width, enabling compact PCB layouts. It supports an operating junction temperature range of -55°C to 175°C, suitable for demanding thermal environments.
| Qty | Low | High |
|---|---|---|
| 760+ | $0.53 | $0.53 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (Vdss) is 50V.
The continuous drain current (Id) is 3A.
The IRF7103Q is available in an 8-SOIC (0.154", 3.90mm Width) surface-mount package.
The operating junction temperature range is -55°C to 175°C.
The maximum on-resistance (Rds on) is 130mΩ at Vgs=10V and Id=3A.
The maximum gate threshold voltage (Vgs(th)) is 3V at Id=250µA.
The maximum input capacitance (Ciss) is 255pF at Vds=25V.