| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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8,500 pcs
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8500 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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3,600 pcs
|
3600 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The IRF7103PBF is a dual N-channel enhancement-mode MOSFET from Infineon Technologies, designed for general-purpose switching and power management applications. It features a drain-source voltage rating of 50V and a continuous drain current of 3A, with a maximum on-resistance of 130mOhm at Vgs=10V and Id=3A. The device offers a gate charge of 30nC at Vgs=10V and an input capacitance of 290pF at Vds=25V, enabling efficient switching performance.
Housed in an industry-standard 8-SOIC surface-mount package, the IRF7103PBF is suitable for compact PCB layouts. The dual MOSFET configuration integrates two independent N-channel transistors in a single package, saving board space and simplifying design. The device operates over a junction temperature range of -55°C to +150°C, making it suitable for a wide range of environments.
Typical applications include DC-DC converters, load switches, motor control, and power management in consumer, industrial, and automotive systems. The low on-resistance and fast switching characteristics help minimize power losses and improve efficiency.
The IRF7103PBF has a drain-source voltage rating of 50V.
The continuous drain current rating is 3A.
The maximum on-resistance is 130mOhm at Vgs=10V and Id=3A.
The IRF7103PBF is housed in an 8-SOIC surface-mount package.
The junction temperature range is -55°C to +150°C.
The RoHS status is reported as RoHS3 compliant, but this is unverified.