IRF7103PBF The IRF7103PBF is a dual N-channel MOSFET from Infineon Technologies, rated for 50V drain-source voltage and 3A continuous drain current, housed in an 8-SOIC surface-mount package.
Mfr Part #:

IRF7103PBF

Available from 2 distributors
Mfr Name: Infineon Technologies
Infineon Technologies
The IRF7103PBF is a dual N-channel MOSFET from Infineon Technologies, rated for 50V drain-source voltage and 3A continuous drain current, housed in an 8-SOIC surface-mount package.
✓ Total Stock: 12,100 pcs

IRF7103PBF Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
8,500 pcs
8500 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
3,600 pcs
3600 pcs On Request 1 On Request On Request On Request On Request On Request

IRF7103PBF Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Configuration
Current
Drain to Source Voltage (Vdss)
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs(th) (Max) @ Id

IRF7103PBF Description

Short technical summary and product information.

The IRF7103PBF is a dual N-channel enhancement-mode MOSFET from Infineon Technologies, designed for general-purpose switching and power management applications. It features a drain-source voltage rating of 50V and a continuous drain current of 3A, with a maximum on-resistance of 130mOhm at Vgs=10V and Id=3A. The device offers a gate charge of 30nC at Vgs=10V and an input capacitance of 290pF at Vds=25V, enabling efficient switching performance.

 

Housed in an industry-standard 8-SOIC surface-mount package, the IRF7103PBF is suitable for compact PCB layouts. The dual MOSFET configuration integrates two independent N-channel transistors in a single package, saving board space and simplifying design. The device operates over a junction temperature range of -55°C to +150°C, making it suitable for a wide range of environments.

 

Typical applications include DC-DC converters, load switches, motor control, and power management in consumer, industrial, and automotive systems. The low on-resistance and fast switching characteristics help minimize power losses and improve efficiency.

IRF7103PBF Quick Information

Product Type: MOSFET Array
Series: HEXFET
Canonical Name: IRF7103PBF Dual N-Channel MOSFET, 50V, 3A, 8-SOIC
Subcategory: Dual N-Channel MOSFET

IRF7103PBF Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): Moisture Sensitivity Level 1 (Unlimited)
REACH Status: REACH Unaffected

IRF7103PBF Features

  • Dual N-channel MOSFET in 8-SOIC package.
  • Rated for 50V drain-source voltage.
  • 3A continuous drain current capability.
  • 130mOhm maximum on-resistance at 10V gate drive.
  • Operates from -55°C to +150°C junction temperature.

IRF7103PBF Applications

  • Ideal for DC-DC converter circuits.
  • Used in load switching applications.
  • Suitable for motor control drivers.
  • Applicable in power management modules.

IRF7103PBF FAQs

6 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating of the IRF7103PBF?

The IRF7103PBF has a drain-source voltage rating of 50V.

What is the continuous drain current rating of the IRF7103PBF?

The continuous drain current rating is 3A.

What is the on-resistance of the IRF7103PBF?

The maximum on-resistance is 130mOhm at Vgs=10V and Id=3A.

What package does the IRF7103PBF come in?

The IRF7103PBF is housed in an 8-SOIC surface-mount package.

What is the operating temperature range of the IRF7103PBF?

The junction temperature range is -55°C to +150°C.

Is the IRF7103PBF RoHS compliant?

The RoHS status is reported as RoHS3 compliant, but this is unverified.

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