| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
692 pcs
|
692 pcs | On Request | 1 | On Request | On Request | 9739G/ | On Request | On Request | |
|
380 pcs
|
380 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Tape & Reel |
The IRF7103 from Vishay Dale is a HEXFET Power MOSFET utilizing advanced processing technology for low on-resistance and fast switching speeds. This dual N-channel MOSFET is housed in a surface-mount SO-8 package, modified with a customized leadframe for enhanced thermal characteristics and dual-die capability.
Key electrical specifications include a drain-to-source breakdown voltage of 50V and a maximum on-resistance of 0.13Ω at 10V gate-source voltage and 3.0A drain current. The continuous drain current is rated at 3.0A at 25°C and 2.3A at 70°C. The device operates within a junction and storage temperature range of -55°C to +150°C.
The SO-8 package is designed for various soldering techniques, including vapor phase, infrared, or wave soldering. Its enhanced thermal characteristics make it suitable for power applications where reduced board space is a consideration. The MOSFET offers fast switching times, with typical rise and fall times of 8ns and 25ns, respectively.
This component is ideal for designers seeking an efficient device for a wide variety of power applications. Its ruggedized design and advanced process technology contribute to its reliability and performance in demanding environments.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.67 | $1.67 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The IRF7103 has a breakdown voltage of 50V.
The RDS(on) is 0.13Ω.
The maximum continuous drain current is 3.0A.
It is packaged in an SO-8 surface-mount package.
It can withstand up to ±20V gate-to-source voltage.
-55°C to +150°C.
