| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
95 pcs
|
95 pcs | On Request | 1 | On Request | On Request | 99 | On Request | On Request | |
|
31 pcs
|
31 pcs | On Request | 1 | On Request | On Request | 04+ | On Request | On Request |
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| Manufacturer Name | |
| Input Capacitance | |
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| Power Dissipation | |
| Tape & Reel |
The IRF7101 is a Dual N-Channel HEXFET Power MOSFET manufactured by Vishay Dale. It utilizes advanced processing techniques to achieve low on-resistance and fast switching speeds, making it suitable for various applications.
Key electrical specifications include a Drain-to-Source Breakdown Voltage of 20V and a maximum On-Resistance of 0.10 Ohms at a gate-source voltage of 10V and a drain current of 1.8A. The continuous drain current is rated at 3.5A at 25°C ambient temperature and 2.3A at 100°C.
This MOSFET is designed for surface mounting and comes in an SO-8 package. It is available in tape and reel packaging, facilitating automated assembly processes. The device operates within a junction temperature range of -55°C to +150°C.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum continuous drain current for the IRF7101 is 3.5A at 25°C ambient temperature.
The IRF7101 has a Drain-to-Source Breakdown Voltage of 20V.
The maximum on-resistance of the IRF7101 is 0.10 Ohms when V GS = 10V and ID = 1.8A.
The junction and storage temperature range for the IRF7101 is -55°C to +150°C.
The IRF7101 is supplied in an SO-8 package for surface mounting.
The RoHS status for the IRF7101 is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) for the IRF7101 is 1 Unlimited.