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294 pcs
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294 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Vishay IRF710PBF is a Type N-Channel Power MOSFET designed for various electronic applications. It features a maximum continuous drain current (Id) of 1.2A and a maximum drain-source voltage (Vds) of 400V. The device has a maximum power dissipation (Pd) of 36W and a maximum drain-source resistance (Rds) of 3.6Ω.
This MOSFET operates in enhancement mode and is housed in a 3-pin TO-220AB package, suitable for through-hole mounting. It has a minimum operating temperature of -55°C and a maximum operating temperature of 150°C. Key electrical characteristics include a typical gate charge (Qg) of 17nC and a maximum gate-source voltage (Vgs) of 20V. The forward voltage (Vf) is 1.6V.
With its robust specifications, the IRF710PBF is suitable for power switching and amplification circuits. Its TO-220AB package facilitates easy integration into designs requiring through-hole components.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.77 | $0.77 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (Vds) for the IRF710PBF is 400V.
The maximum continuous drain current (Id) for the IRF710PBF is 1.2A.
The Vishay IRF710PBF MOSFET comes in a TO-220AB package.
The maximum power dissipation (Pd) for the IRF710PBF is 36W.
The operating temperature range for the IRF710PBF is from -55°C to 150°C.
