| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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34 pcs
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34 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The IRF710 is a third-generation N-Channel power MOSFET from Vishay Siliconix, designed for fast switching, ruggedized device performance, and low on-resistance. It offers a drain-source voltage rating of 400V and a continuous drain current of 2A at 25°C case temperature. The maximum on-resistance is 3.6 Ohm at a gate drive of 10V, with a total gate charge of 17nC for efficient switching. The device is avalanche rated with a single pulse avalanche energy of 120mJ and features a dynamic dV/dt rating of 4.0 V/ns.
The MOSFET is housed in a TO-220AB package (TO-220-3) with through-hole mounting, providing low thermal resistance for power dissipation up to 36W. It is suitable for commercial-industrial applications requiring high voltage switching at moderate current levels, such as offline power supplies, DC-DC converters, and motor control circuits. The operating junction temperature range is -55°C to 150°C.
400V maximum.
2A at Tc=25°C.
3.6 Ohm maximum at Id=1.2A, Vgs=10V.
-55°C to 150°C (junction).
TO-220-3 (TO-220AB).
4V maximum at Id=250µA.