IRF6894MTRPBF The IRF6894MTRPBF is a 25V N-Channel power MOSFET from Infineon with an integrated Schottky diode. It features a low on-resistance of 1.3mΩ and supports continuous drain current up to 160A.
Mfr Part #:

IRF6894MTRPBF

Available from 1 distributors
Mfr Name: Infineon Technologies
Infineon Technologies
The IRF6894MTRPBF is a 25V N-Channel power MOSFET from Infineon with an integrated Schottky diode. It features a low on-resistance of 1.3mΩ and supports continuous drain current up to 160A.
✓ Total Stock: 4,030 pcs

IRF6894MTRPBF Available from 1 distributor

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IRF6894MTRPBF Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Automotive Grade
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Feature
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Height
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

IRF6894MTRPBF Description

Short technical summary and product information.

The IRF6894MTRPBF is a 25V N-Channel power MOSFET from Infineon Technologies, part of the HEXFET family. It integrates a monolithic Schottky diode to reduce reverse recovery charge (Qrr) and improve efficiency in synchronous buck converters. The device offers a maximum drain-source voltage of 25V and a continuous drain current of 160A at case temperature (Tc).

 

Key electrical characteristics include a typical on-resistance of 0.9mΩ at 10V gate drive and 1.4mΩ at 4.5V, with a maximum of 1.3mΩ at 33A and 10V. Gate charge is typically 31nC at 10V, and input capacitance is 4160pF at 13V drain-source. The device is avalanche-rated with a single-pulse avalanche energy of 540mJ and avalanche current of 30A.

 

The IRF6894MTRPBF is housed in a DirectFET Isometric MX package, a low-profile surface-mount package with a height of less than 0.7mm. It supports dual-sided cooling for improved thermal performance. The package is compatible with standard surface-mount assembly processes and is supplied in tape and reel packaging with a standard quantity of 4800 pieces.

IRF6894MTRPBF Quick Information

Product Type: Power MOSFET
Series: IRF6894MPbF
Canonical Name: IRF6894MTRPBF N-Channel Power MOSFET with Integrated Schottky Diode
Subcategory: Single MOSFET

IRF6894MTRPBF Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)
REACH Status: REACH Unaffected
Lead Free: No Lead

IRF6894MTRPBF Features

  • 25V maximum drain-source voltage rating.
  • Low on-resistance of 1.3mΩ maximum.
  • Integrated Schottky diode reduces reverse recovery.
  • Low profile DirectFET MX package under 0.7mm.
  • Dual-sided cooling for enhanced thermal management.

IRF6894MTRPBF Applications

  • Ideal for CPU core DC-DC converters.
  • Used in synchronous buck converter designs.
  • Suitable for high-frequency power switching.
  • Designed for high-current load applications.
  • Compatible with surface-mount assembly processes.

IRF6894MTRPBF FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage of the IRF6894MTRPBF?

The maximum drain-source voltage (Vdss) is 25V.

What is the on-resistance of the IRF6894MTRPBF?

The maximum on-resistance is 1.3mΩ at 33A and 10V gate drive. Typical values are 0.9mΩ at 10V and 1.4mΩ at 4.5V.

What package does the IRF6894MTRPBF come in?

It comes in a DirectFET Isometric MX surface-mount package with a height of less than 0.7mm.

What is the operating temperature range of the IRF6894MTRPBF?

The operating junction temperature range is -40°C to 150°C.

Is the IRF6894MTRPBF RoHS compliant?

Yes, the IRF6894MTRPBF is RoHS compliant and also contains no lead and no bromide.

What is the gate charge of the IRF6894MTRPBF?

The typical gate charge is 31nC at 10V gate drive, with a maximum of 39nC at 4.5V.

Does the IRF6894MTRPBF have an integrated Schottky diode?

Yes, it features an integrated monolithic Schottky diode to reduce reverse recovery charge.

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