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IRF6725MTRPBF N-Channel power MOSFET with 30V drain-source voltage, 170A max current, and 2.2mΩ on-resistance in DirectFET MX surface-mount package.
Mfr Part #:

IRF6725MTRPBF

Available from 1 distributors
Mfr Name: Infineon Technologies
Infineon Technologies
N-Channel power MOSFET with 30V drain-source voltage, 170A max current, and 2.2mΩ on-resistance in DirectFET MX surface-mount package.
✓ Total Stock: 34,278 pcs

IRF6725MTRPBF Available from 1 distributor

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✓ Non-Authorised
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Smaxon Electronics ✓
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34,278 pcs
On Request
34278 pcs On Request 1 On Request On Request 14+16 On Request On Request
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IRF6725MTRPBF Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
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IRF6725MTRPBF Description

Short technical summary and product information.

The IRF6725MTRPBF is an N-Channel power MOSFET from Infineon Technologies, built on advanced HEXFET silicon technology. It features a maximum drain-to-source voltage of 30V and can handle a continuous drain current of 28A at 25°C ambient, or up to 170A when the case temperature is held at 25°C. The device offers an extremely low on-resistance of 2.2mΩ at 10V gate drive, minimizing conduction losses.

 

This MOSFET is optimized for high-efficiency DC-DC converters, particularly synchronous buck converters operating from 12V bus supplies. Its low gate charge (54nC at 4.5V) and low input capacitance (4700pF at 15V) help reduce switching losses, making it suitable for high-frequency power conversion. The DirectFET MX package enables dual-sided cooling, improving thermal performance compared to conventional packages.

 

The device is surface-mountable and operates over a junction temperature range of -40°C to +150°C. It is RoHS3 compliant and halogen-free, supporting environmentally conscious designs. The DirectFET package offers a low profile of 0.7mm and is compatible with standard PCB assembly processes when proper guidelines are followed.

IRF6725MTRPBF Quick Information

Product Type: Power MOSFET
Series: HEXFET
Canonical Name: N-Channel Power MOSFET
Subcategory: Power MOSFET

IRF6725MTRPBF Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)
REACH Status: REACH Unaffected
Lead Free: Yes

IRF6725MTRPBF Features

  • Low on-resistance of 2.2 mΩ.
  • High drain current up to 170A.
  • Optimized for synchronous buck converters.
  • DirectFET MX package with dual-sided cooling.
  • RoHS3 compliant and halogen free.

IRF6725MTRPBF Applications

  • Synchronous buck DC-DC converters.
  • High-efficiency power supply designs.
  • 12V bus converter applications.
  • Processor power delivery systems.

IRF6725MTRPBF FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-to-source voltage of the IRF6725MTRPBF?

30V.

What is the maximum continuous drain current?

28A at 25°C ambient, 170A at 25°C case.

What is the on-resistance of this MOSFET?

2.2mΩ max at Vgs=10V, Id=28A.

What is the operating temperature range?

-40°C to +150°C (junction).

What package is the IRF6725MTRPBF available in?

DirectFET Isometric MX surface-mount package.

Is the IRF6725MTRPBF RoHS compliant?

It is listed as RoHS3 compliant, though this is unverified.

What is the gate charge?

54 nC max at Vgs=4.5V.

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