| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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30,818 pcs
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30818 pcs | On Request | 1 | On Request | On Request | 16+ | On Request | On Request |
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The IRF6721STRPBF is an N-Channel enhancement-mode power MOSFET manufactured by Infineon Technologies. It utilizes HEXFET silicon technology combined with the advanced DirectFET Isometric SQ package, which offers a low profile of 0.7 mm and a footprint compatible with MICRO-8 layouts. This device is designed for high-efficiency DC-DC converter applications.
Key electrical specifications include a drain-to-source voltage (Vdss) of 30 V, a continuous drain current of 14 A at 25°C ambient temperature and 60 A at 25°C case temperature, and a maximum drain-source on-resistance of 7.3 mOhm at a 10V gate drive. The gate threshold voltage is a maximum of 2.4 V at 25 µA drain current. The device supports gate drive voltages of 4.5 V and 10 V for optimized on-resistance.
The DirectFET package enables dual-sided cooling for improved thermal performance. Maximum power dissipation is 2.2 W at ambient temperature and 42 W at case temperature. The operating junction temperature range is -40°C to 150°C. The device is surface mountable and is RoHS compliant and halogen free.
The maximum drain-source voltage (Vdss) is 30 V.
The continuous drain current is 14 A at 25°C ambient temperature and 60 A at 25°C case temperature.
The maximum drain-source on-resistance is 7.3 mOhm at a gate-source voltage of 10 V and drain current of 14 A.
It uses the DirectFET Isometric SQ surface-mount package.
The operating junction temperature range is -40°C to 150°C.
Yes, it is RoHS3 compliant and halogen free as confirmed by the datasheet.
The maximum gate threshold voltage is 2.4 V at a drain current of 25 µA.