| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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1,874 pcs
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1874 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IRF6715MTRPBF is an N-Channel Power MOSFET designed for high-frequency switching applications. It features a drain-to-source voltage of 25V and a continuous drain current of 34A at ambient temperature (Ta) and 180A at case temperature (Tc). The typical on-resistance is 1.3mΩ at 10V gate drive and 2.1mΩ at 4.5V, making it suitable for low-voltage DC-DC converters. The device is housed in the DirectFET Isometric MX package, which offers a low profile of less than 0.6mm and enables dual-sided cooling for improved thermal performance. The operating junction temperature range is -40°C to 150°C. The IRF6715MTRPBF is optimized for synchronous buck converter applications, particularly as the sync FET in CPU core power supplies. It is RoHS compliant and halogen free.
The drain-to-source voltage (Vds) is 25V maximum, and the gate-source voltage (Vgs) is ±20V maximum.
The package is DirectFET Isometric MX (Supplier Device Package: DIRECTFET MX).
The operating junction temperature range is -40°C to 150°C.
The device is RoHS3 compliant and halogen free according to the datasheet, though the compliance status is unverified.
The maximum drain current is 34A at Ta=25°C (Vgs=10V) and 180A at Tc=25°C.
The typical on-resistance is 1.3mΩ at Vgs=10V and 2.1mΩ at Vgs=4.5V.
The total gate charge (Qg) is 40nC typical and 59nC maximum at Vgs=4.5V. The gate-drain charge (Qgd) is 12nC typical.