| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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4,816 pcs
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4816 pcs | On Request | 1 | On Request | On Request | 1007 | On Request | On Request |
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| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IRF6710S2TRPBF is a single N-Channel power MOSFET manufactured by Infineon Technologies. It uses MOSFET (Metal Oxide) technology and is designed for surface mount applications.
Key electrical specifications include a maximum drain to source voltage (Vdss) of 25V and a continuous drain current of 12A at 25°C ambient temperature. The device has a maximum on-resistance of 5.9 mOhm at a gate drive of 10V and 12A drain current. The maximum gate charge is 13 nC at 4.5V, and the input capacitance is 1190 pF at 13V drain-source voltage.
The MOSFET is housed in a DirectFET Isometric S1 package, which is a surface mount package. It can operate over a junction temperature range of -55°C to 175°C. The maximum power dissipation is 15W at a case temperature of 25°C.
The maximum drain to source voltage (Vdss) is 25 V.
The maximum continuous drain current is 12 A at 25°C ambient temperature and 37 A at 25°C case temperature.
The maximum on-resistance (Rds on) is 5.9 mOhm at a gate-source voltage of 10V and a drain current of 12A.
The operating junction temperature range is -55°C to 175°C.
It uses a DirectFET Isometric S1 surface mount package.
The maximum gate threshold voltage (Vgs(th)) is 2.4 V at a drain current of 25 µA.
The maximum power dissipation is 15 W at a case temperature of 25°C and 1.8 W at an ambient temperature of 25°C.