| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
5,820 pcs
|
5820 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
64 pcs
|
64 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IRF6665TRPBF is an N-Channel MOSFET from Infineon Technologies designed for Class-D audio amplifier applications. It features a drain-source voltage of 100V and a continuous drain current of 4.2A at 25°C ambient (19A at case temperature 25°C). The device offers low on-resistance (typical 53mΩ at 10V gate drive) and low gate charge (typical 8.7nC) to improve efficiency and reduce total harmonic distortion. The DirectFET Isometric SH package provides low parasitic inductance and resistance, enabling dual-sided cooling and compatibility with standard surface-mount assembly processes. The MOSFET is RoHS compliant and lead-free, qualified up to 260°C reflow.
The maximum drain-source voltage is 100V.
It comes in a DirectFET Isometric SH surface-mount package.
The operating junction temperature range is -40°C to 150°C.
Yes, it is RoHS3 compliant and lead-free.
The typical on-resistance is 53 mΩ at VGS=10V.
The maximum continuous drain current at 25°C ambient is 4.2A.
The maximum gate threshold voltage is 5V at ID=250µA.