| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
39,420 pcs
|
39420 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
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| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IRF6646TRPBF is an N-Channel Power MOSFET from Infineon Technologies, designed for high-performance power conversion applications. It features a maximum drain-source voltage of 80V and a continuous drain current of 12A at 25°C ambient temperature (68A at case temperature 25°C). The device offers a low maximum on-resistance of 9.5mOhm at 12A and 10V gate drive, with a typical value of 7.6mOhm. The total gate charge is typically 36nC, enabling efficient switching.
This MOSFET is optimized for primary side bridge topologies in isolated DC-DC converters, particularly for 48V input voltage range systems (36V to 60V ETSI). It is also suitable for synchronous rectification and other high-efficiency power supply designs. The DirectFET Isometric MN package provides a low profile (under 0.7mm) and supports dual-sided cooling for improved thermal performance. It is surface mount compatible and RoHS compliant with lead-free qualification up to 260°C reflow.
The device includes avalanche energy capability of 230mJ (single pulse) and is designed for high Cdv/dt immunity. Operating junction temperature range is -40°C to 150°C.
| Qty | Low | High |
|---|---|---|
| 1+ | $3.22 | $3.22 |
| 10+ | $2.09 | $2.09 |
| 50+ | $1.60 | $1.60 |
| 100+ | $1.44 | $1.44 |
| 500+ | $1.17 | $1.17 |
| 4,800+ | $0.93 | $0.93 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
-40°C to 150°C (junction temperature).
Yes, RoHS3 compliant and lead-free.
80V.
12A at 25°C ambient, 68A at 25°C case temperature.
Maximum 9.5mOhm at 12A, 10V; typical 7.6mOhm at 10V.
Typical 36nC at 10V, maximum 50nC.
DirectFET Isometric MN (surface mount).