| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
20,220 pcs
|
20220 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IRF6644TRPBF is an N-Channel power MOSFET from Infineon Technologies, designed for high-performance power conversion applications. It features a drain-source voltage (Vdss) of 100V and a continuous drain current of 60A at case temperature (Tc), with a maximum on-resistance of 13mOhm at 10V gate drive and typical 10.3mOhm. The device has a typical total gate charge of 28nC and input capacitance of 2210pF at 25V.
Optimized for primary side bridge topologies in isolated DC-DC converters and synchronous rectification, this MOSFET combines HEXFET silicon technology with the advanced DirectFET package. The DirectFET Isometric MN package offers a low profile of less than 0.7mm, dual-sided cooling for improved thermal performance, and compatibility with existing surface mount assembly processes.
The device operates over a junction temperature range of -40°C to 150°C and is RoHS compliant and lead-free. It is suitable for high-efficiency isolated DC-DC converters, telecom applications (36V-75V input), and secondary side synchronous rectification in regulated topologies.
| Qty | Low | High |
|---|---|---|
| 1+ | $3.77 | $3.77 |
| 10+ | $2.46 | $2.46 |
| 50+ | $1.90 | $1.90 |
| 100+ | $1.72 | $1.72 |
| 500+ | $1.40 | $1.40 |
| 4,800+ | $1.14 | $1.14 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
100V.
DirectFET Isometric MN surface mount package.
-40°C to 150°C (junction temperature).
Yes, RoHS3 compliant and lead-free.
Maximum 13mOhm at 10V gate drive, typical 10.3mOhm.