| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
10 pcs
|
10 pcs | On Request | 1 | On Request | On Request | NO DC | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IRF6644 is an N-Channel enhancement mode power MOSFET from Infineon's HEXFET family, designed for high-efficiency power conversion. It is rated for a maximum drain-to-source voltage of 100V and a continuous drain current of 10.3A at ambient temperature (60A at case temperature). The device features a very low maximum on-resistance of 13mOhm at Vgs=10V, minimizing conduction losses.
This MOSFET is optimized for primary side bridge topologies in isolated DC-DC converters, wide range universal input Telecom applications (36V-75V), and secondary side synchronous rectification. The DirectFET Isometric MN package offers a low profile of less than 0.7mm and supports dual-sided cooling for enhanced thermal performance. The package is compatible with standard PCB assembly processes.
Key electrical characteristics include a maximum gate charge of 47nC at Vgs=10V and an input capacitance of 2210pF at Vds=25V, enabling efficient high-frequency switching. The device is RoHS3 compliant and contains no lead or bromide.
| Qty | Low | High |
|---|---|---|
| 4,800+ | $1.73 | $1.73 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-to-source voltage (Vdss) is 100V.
The maximum continuous drain current is 10.3A at ambient temperature (Ta=25°C) and 60A at case temperature (Tc=25°C).
The maximum on-resistance is 13mOhm at Vgs=10V and Id=10.3A.
The IRF6644 is available in a DirectFET Isometric MN surface-mount package with a maximum height of 0.7mm.
Yes, the IRF6644 is RoHS3 compliant and contains no lead or bromide according to the datasheet.
The maximum gate charge (Qg) at Vgs=10V is 47nC.
The operating junction temperature range is -40°C to 150°C.