| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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12,323 pcs
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12323 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The IRF6635TR1PBF is an N-Channel power MOSFET from Infineon Technologies, designed for high-efficiency power conversion applications. It features a maximum drain-to-source voltage (Vdss) of 30V and a continuous drain current rating of 32A at 25°C ambient temperature (180A at case temperature). The device achieves an ultra-low on-resistance of 1.8mΩ maximum at both 10V and 4.5V gate drive, minimizing conduction losses.
This MOSFET is optimized for synchronous buck converter SyncFET sockets, offering low gate charge (71 nC max at 4.5V, 47 nC typical at 10V) and low package inductance to reduce switching losses. The DirectFET Isometric MX package enables dual-sided cooling, improving thermal performance by up to 80% compared to traditional SO-8 packages.
The IRF6635TR1PBF is surface-mount compatible and qualified for lead-free reflow up to 260°C. It is RoHS3 compliant and REACH unaffected, making it suitable for environmentally conscious designs. The device operates over a junction temperature range of -40°C to 150°C.
The junction temperature range is -40°C to 150°C.
It comes in a DirectFET™ Isometric MX surface-mount package.
Yes, it is RoHS3 compliant and lead-free (qualified up to 260°C reflow).
Total gate charge is 71 nC maximum at 4.5V and 47 nC typical at 10V.
Maximum on-resistance is 1.8 mΩ at both 10V and 4.5V gate drive.
Continuous drain current is 32A at 25°C ambient and 180A at 25°C case temperature.
Maximum gate threshold voltage is 2.35V at 250µA drain current, typical 1.8V.