| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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692 pcs
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692 pcs | On Request | 1 | On Request | On Request | 1122 | On Request | On Request |
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The IRF6631TR1PBF is an N-Channel enhancement mode MOSFET from Infineon Technologies, designed for high-efficiency power conversion. It features a maximum drain-to-source voltage of 30V and a continuous drain current rating of 13A at 25°C ambient temperature, with a pulsed current capability of 100A.
This MOSFET offers a maximum on-resistance of 7.8mΩ at 10V gate drive, with typical values of 6.0mΩ at 10V and 8.3mΩ at 4.5V. The gate threshold voltage is typically 1.8V with a maximum of 2.35V, enabling logic-level drive compatibility. Total gate charge is typically 12nC, supporting efficient switching in DC-DC converter applications.
The device is housed in a surface-mount DirectFET Isometric SQ package, providing excellent thermal performance with a maximum power dissipation of 42W at case temperature 25°C. It is RoHS compliant and lead-free, qualified up to 260°C reflow.
The maximum drain-source voltage (Vdss) is 30V.
The continuous drain current is 13A at 25°C ambient temperature and 57A at 25°C case temperature with 10V gate drive.
The maximum on-resistance is 7.8mΩ at 13A drain current and 10V gate drive. Typical values are 6.0mΩ at 10V and 8.3mΩ at 4.5V.
It is available in a surface mount DirectFET Isometric SQ package.
Yes, it is RoHS3 compliant and lead-free, qualified up to 260°C reflow.
The operating junction temperature range is -40°C to 150°C.
The maximum gate threshold voltage is 2.35V at 25µA drain current, with a typical value of 1.8V.