BC847B/215
Nexperia USA Inc.
The Nexperia USA Inc. BC847B/215 is a bipolar transistor. It is RoHS3 Compliant and has an MSL Level 1 rating.
| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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386 pcs
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386 pcs | On Request | 1 | On Request | On Request | 07+08 | On Request | On Request |
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| Tape & Reel |
The IRF6623TR1 is an N-Channel MOSFET manufactured by Vishay Dale, part of the HEXFET® series. It is designed for applications requiring a 20V drain-to-source voltage (Vdss) and can handle a continuous drain current of 16A at 25°C ambient temperature or 55A at 25°C case temperature.
Key electrical characteristics include a maximum on-resistance (Rds(on)) of 5.7mOhm at a gate-source voltage (Vgs) of 10V and a drain current (Id) of 15A. The gate threshold voltage (Vgs(th)) is a maximum of 2.2V at 250µA. The device has a maximum gate charge (Qg) of 17nC at 4.5V Vgs and an input capacitance (Ciss) of 1360pF at 10V Vds.
This MOSFET operates within a temperature range of -40°C to 150°C (TJ). It is housed in a surface mount DIRECTFET™ ST package, specifically the DirectFET™ Isometric ST variant. The maximum power dissipation is 1.4W at 25°C ambient and 42W at 25°C case temperature.
| Qty | Low | High |
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| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source voltage (Vdss) for the IRF6623TR1 is 20V.
The continuous drain current (Id) is 16A at 25°C ambient (Ta) and 55A at 25°C case (Tc).
The maximum on-resistance (Rds(on)) is 5.7mOhm at 15A drain current and 10V gate-source voltage.
The operating temperature range (TJ) is -40°C to 150°C.
The IRF6623TR1 is in a surface mount DIRECTFET™ ST package, specifically the DirectFET™ Isometric ST case.
The RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) is 1 Unlimited.