| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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846 pcs
|
846 pcs | On Request | 1 | On Request | On Request | 0948+ | On Request | On Request | |
|
173 pcs
|
173 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The IRF6618TRPBF from Vishay Dale is a high-performance N-channel MOSFET. It is rated for a drain-source breakdown voltage of 30V and can handle a continuous drain current of 170A.
This MOSFET offers a low drain-source on-resistance of 3.4 mOhms, making it suitable for applications requiring efficient power handling. The gate-source voltage is rated at 20V, and the gate charge is 46 nC. With a power dissipation of 89W, it is designed for demanding environments.
The component utilizes Si technology and is configured as a single N-channel transistor. It is packaged in a DirectFET-MT surface-mount case, with dimensions of 6.35mm in length and 5.05mm in width, and a height of 0.7mm. The standard factory pack quantity is 4800 units, supplied on a reel.
This MOSFET is suitable for various power switching applications where high current and low on-resistance are critical. Its surface-mount package allows for integration into compact designs.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.93 | $2.93 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source breakdown voltage is 30 V.
The continuous drain current is 170 A.
The Rds On resistance is 3.4 mOhms.
The gate-source voltage is 20 V.
The gate charge is 46 nC.
The power dissipation is 89 W.
The package type is DirectFET-MT.