IRF6618TRPBF The Vishay Dale IRF6618TRPBF is a 30V N-channel MOSFET designed for power applications. It features a low Rds On resistance and high continuous drain current.
Mfr Part #:

IRF6618TRPBF

Available from 2 distributors
Mfr Name: Vishay
Vishay
The Vishay Dale IRF6618TRPBF is a 30V N-channel MOSFET designed for power applications. It features a low Rds On resistance and high continuous drain current.
✓ Total Stock: 1,019 pcs
$ Price Range: $2.93

IRF6618TRPBF Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
846 pcs
846 pcs On Request 1 On Request On Request 0948+ On Request On Request
Non-Authorised Inventory information
173 pcs
173 pcs On Request 1 On Request On Request On Request On Request On Request

IRF6618TRPBF Specifications Quick View

Most important parameters for selection – full specs in datasheet.
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IRF6618TRPBF Description

Short technical summary and product information.

The IRF6618TRPBF from Vishay Dale is a high-performance N-channel MOSFET. It is rated for a drain-source breakdown voltage of 30V and can handle a continuous drain current of 170A.

 

This MOSFET offers a low drain-source on-resistance of 3.4 mOhms, making it suitable for applications requiring efficient power handling. The gate-source voltage is rated at 20V, and the gate charge is 46 nC. With a power dissipation of 89W, it is designed for demanding environments.

 

The component utilizes Si technology and is configured as a single N-channel transistor. It is packaged in a DirectFET-MT surface-mount case, with dimensions of 6.35mm in length and 5.05mm in width, and a height of 0.7mm. The standard factory pack quantity is 4800 units, supplied on a reel.

 

This MOSFET is suitable for various power switching applications where high current and low on-resistance are critical. Its surface-mount package allows for integration into compact designs.

IRF6618TRPBF Quick Information

Product Type: MOSFET
Series: IRF6618
Canonical Name: IRF6618TRPBF N-Channel MOSFET
Subcategory: Transistors - FETs, MOSFETs - Single

IRF6618TRPBF Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

IRF6618TRPBF Estimated Pricing

Qty Low High
1+ $2.93 $2.93

Estimated market price range - modelled values for guidance only, not live distributor offers.

IRF6618TRPBF Features

  • 30V N-channel HEXFET power MOSFET.
  • Continuous drain current of 170A.
  • Low drain-source on-resistance of 3.4 mOhms.
  • DirectFET-MT surface-mount package.
  • High power dissipation of 89W.

IRF6618TRPBF Applications

  • Suitable for active OR'ing applications.
  • Ideal for high-current power switching.
  • Used in power management circuits.
  • Efficient power conversion designs.

IRF6618TRPBF FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source breakdown voltage?

The drain-source breakdown voltage is 30 V.

What is the continuous drain current?

The continuous drain current is 170 A.

What is the Rds On resistance?

The Rds On resistance is 3.4 mOhms.

What is the gate-source voltage rating?

The gate-source voltage is 20 V.

What is the gate charge?

The gate charge is 46 nC.

What is the power dissipation?

The power dissipation is 89 W.

What is the package type?

The package type is DirectFET-MT.

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