| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
685 pcs
|
685 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name |
The IRF6618TR1 from Vishay Dale is an N-channel HEXFET Power MOSFET. It is designed for application-specific MOSFET requirements, making it ideal for CPU core DC-DC converters. This component offers a drain-source voltage rating of 30V and a gate voltage of 20V.
The MOSFET utilizes the DirectFET Mt package, which is suitable for surface mount applications. It is characterized by low conduction losses and low switching losses, contributing to efficient power conversion. The component is also noted for its low profile.
Environmental compliance includes RoHS3 compliance, Moisture Sensitivity Level 1, and REACH unaffected status. These attributes ensure suitability for various manufacturing and environmental standards.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.93 | $2.93 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source voltage for the IRF6618TR1 is 30V.
The gate voltage for the IRF6618TR1 is 20V.
The IRF6618TR1 is an N-channel HEXFET Power MOSFET.
The IRF6618TR1 uses the DirectFET Mt package for surface mounting.
The IRF6618TR1 is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) for the IRF6618TR1 is 1 Unlimited.