| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
8,168 pcs
|
8168 pcs | On Request | 1 | On Request | On Request | 21+ | On Request | On Request | |
|
4,200 pcs
|
4200 pcs | On Request | 1 | On Request | On Request | 21+ | On Request | On Request | |
|
1,556 pcs
|
1556 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Industrial Grade | |
| Medical Grade | |
| Military Grade | |
| Mounting Type | |
| Power Dissipation |
The Infineon IRF6614TRPBF is an N-Channel Power MOSFET utilizing HEXFET® Silicon technology and the advanced DirectFET™ packaging. This combination achieves very low on-state resistance within a compact package that has a MICRO-8 footprint and a low profile of 0.7 mm. The DirectFET package supports dual-sided cooling, significantly enhancing thermal transfer in power systems.
This MOSFET is optimized for parameters critical in synchronous buck converters operating from a 12-volt bus, including low Rds(on) and gate charge, which minimize losses in the control FET socket. It offers a drain-source voltage of 40V and a continuous drain current of 12.7A at 25°C case temperature. The typical on-resistance is 5.9mΩ at 10V gate-to-source voltage.
The DirectFET package is compatible with standard PCB layout geometries and assembly equipment, supporting common soldering techniques when following application note AN-1035. Its design balances low resistance and low charge with ultra-low package inductance, reducing both conduction and switching losses, making it ideal for high-efficiency DC-DC converters powering modern processors at higher frequencies.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.22 | $0.22 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source voltage is 40V.
The continuous drain current is 12.7A at 25°C case temperature.
The typical on-resistance is 5.9mΩ at 10V gate-to-source voltage.
It uses the DirectFET package.
It is suitable for SMD mounting.