| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
5,820 pcs
|
5820 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IRF6613TRPBF is an N-Channel power MOSFET from Infineon Technologies, designed for high-efficiency power conversion applications. It features a drain-to-source voltage (Vdss) of 40V and a continuous drain current of 23A at 25°C ambient temperature (150A at case temperature). The device offers a low typical on-resistance of 3.4mOhm at 10V gate drive, minimizing conduction losses. Gate charge is typically 42nC at 10V, and input capacitance is 5950pF at 15V Vds, enabling efficient switching.
This MOSFET is housed in the DirectFET Isometric MT package, a surface-mount package with a low profile (<0.7mm) that supports dual-sided cooling for improved thermal performance. Maximum power dissipation is 89W at case temperature (25°C) and 2.8W at ambient. The operating junction temperature range is -40°C to 150°C. The device is RoHS compliant and lead-free, qualified up to 260°C reflow.
Typical applications include CPU core DC-DC converters, synchronous buck converters, and other high-frequency power management systems. The combination of low Rds(on), low gate charge, and high Cdv/dt immunity makes it suitable for synchronous FET applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.86 | $2.86 |
| 10+ | $1.84 | $1.84 |
| 50+ | $1.41 | $1.41 |
| 100+ | $1.27 | $1.27 |
| 500+ | $1.02 | $1.02 |
| 4,800+ | $0.80 | $0.80 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-to-source voltage (Vdss) is 40V.
It comes in a DirectFET Isometric MT surface mount package.
The operating junction temperature range is -40°C to 150°C.
Yes, it is RoHS3 compliant and lead-free.
Continuous drain current is 23A at 25°C ambient and 150A at 25°C case temperature. Pulsed drain current is 180A.
Maximum on-resistance is 3.4mOhm at Vgs=10V, Id=23A. Typical on-resistance is 3.4mOhm at 10V and 4.1mOhm at 4.5V.
Typical gate charge is 42nC at Vgs=10V. Maximum gate charge is 63nC at Vgs=4.5V.