| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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990 pcs
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990 pcs | On Request | 1 | On Request | On Request | 709 | On Request | On Request |
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| Drive Voltage (Max Rds On, Min Rds On) | |
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| Input Capacitance (Ciss) (Max) @ Vds | |
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The IRF6611TR1 is an N-Channel power MOSFET from Infineon Technologies, part of the HEXFET family in the advanced DirectFET Isometric MX package. It is designed for high-efficiency power conversion applications, offering a maximum drain-to-source voltage of 30V and a continuous drain current of 32A at 25°C ambient temperature (150A at case temperature).
The device features a typical on-resistance of just 2.0mOhm at 10V gate drive, with a maximum of 2.6mOhm at 27A and 10V. Gate charge is optimized for fast switching, with a typical total gate charge of 37nC and a maximum of 56nC at 4.5V. Input capacitance is 4860pF at 15V drain-source voltage.
The DirectFET MX package offers a low profile of less than 0.7mm and supports dual-sided cooling for improved thermal management. Maximum power dissipation is 3.9W at ambient temperature and 89W at case temperature. The device operates over a junction temperature range of -40°C to 150°C.
The maximum drain-to-source voltage (Vdss) is 30V.
The continuous drain current is 32A at 25°C ambient temperature (Ta) and 150A at 25°C case temperature (Tc).
The maximum on-resistance is 2.6mOhm at a drain current of 27A and gate-source voltage of 10V. Typical on-resistance is 2.0mOhm at 10V.
It uses the DirectFET Isometric MX surface-mount package, also referred to as the DIRECTFET MX supplier device package.
The operating junction temperature range is -40°C to 150°C.
The maximum gate threshold voltage is 2.25V at a drain current of 250µA. Typical threshold voltage is 1.7V.
The maximum total gate charge is 56nC at a gate-source voltage of 4.5V. Typical total gate charge is 37nC.