| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
452 pcs
|
452 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IRF644SPBF is an N-Channel power MOSFET designed for high-voltage switching applications. It features a drain-source voltage (Vdss) of 250V and a continuous drain current (Id) of 14A at 25°C case temperature. The device has a maximum on-resistance (Rds(on)) of 280 mOhm at Vgs = 10V and Id = 8.4A, ensuring efficient power handling.
This MOSFET uses third-generation power MOSFET technology, providing fast switching and ruggedized device design. It has a maximum gate charge (Qg) of 68 nC at Vgs = 10V and an input capacitance (Ciss) of 1300 pF at Vds = 25V, which are important parameters for gate drive design and switching performance.
The device is offered in a surface-mount D2PAK (TO-263) package, which is suitable for high-current applications due to its low internal connection resistance. It can dissipate up to 125W at Tc = 25°C and operates over a junction temperature range of -55°C to 150°C.
| Qty | Low | High |
|---|---|---|
| 1+ | $5.03 | $5.03 |
| 10+ | $3.33 | $3.33 |
| 50+ | $2.60 | $2.60 |
| 100+ | $2.36 | $2.36 |
| 500+ | $1.95 | $1.95 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source voltage (Vdss) is 250V.
The continuous drain current (Id) is 14A at Tc = 25°C.
The maximum on-resistance (Rds(on)) is 280 mOhm at Vgs = 10V and Id = 8.4A.
The IRF644SPBF is available in a surface-mount D2PAK (TO-263) package.
The operating junction temperature range is -55°C to 150°C.
The maximum power dissipation is 125W at Tc = 25°C.
The maximum gate threshold voltage (Vgs(th)) is 4V at Id = 250 µA.