| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
4,000 pcs
|
4000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,520 pcs
|
1520 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
50 pcs
|
50 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IRF644PBF is an N-Channel power MOSFET from Vishay Siliconix, designed for high-efficiency switching applications. It features a drain-source voltage (Vdss) of 250V and a continuous drain current of 14A at 25°C, derating to 8.5A at 100°C. The device offers a maximum on-resistance of 280 mOhm at Vgs = 10V and Id = 8.4A, enabling low conduction losses.
This MOSFET incorporates third-generation technology for fast switching, with a total gate charge of 68 nC and typical gate-source and gate-drain charges of 11 nC and 35 nC, respectively. It is avalanche rated with a single pulse avalanche energy of 550 mJ, enhancing ruggedness in inductive load environments. The device operates over a junction temperature range of -55°C to 150°C and has a maximum power dissipation of 125W at case temperature 25°C.
The IRF644PBF is housed in a standard TO-220AB package, which is through-hole mountable and offers low thermal resistance (junction-to-case 1.0°C/W). It is suitable for commercial and industrial applications requiring power dissipation up to approximately 50W. The part is listed as RoHS3 compliant, though this status is unverified in the provided data.
| Qty | Low | High |
|---|---|---|
| 1+ | $5.24 | $5.24 |
| 10+ | $3.48 | $3.48 |
| 50+ | $2.72 | $2.72 |
| 100+ | $2.47 | $2.47 |
| 500+ | $2.05 | $2.05 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (Vdss) is 250 V.
The continuous drain current is 14 A at Tc = 25°C, and 8.5 A at Tc = 100°C.
The IRF644PBF is offered in a TO-220AB through-hole package.
The operating junction temperature range is -55°C to 150°C.
The device is listed as RoHS3 compliant, but this status is unverified and has low confidence.
The maximum drain-source on-resistance is 280 mOhm at Id = 8.4 A and Vgs = 10 V.
The total gate charge is 68 nC maximum at Vgs = 10 V, with typical gate-source charge of 11 nC and gate-drain charge of 35 nC.