| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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48 pcs
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48 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Drain to Source Voltage (Vdss) | |
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| Industrial Grade | |
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| Rds On (Max) @ Id, Vgs | |
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| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IRF644NSPBF is an N-Channel power MOSFET manufactured by Vishay Dale (Vishay Siliconix). It features a drain-source voltage rating of 250V and a continuous drain current of 14A at 25°C case temperature. The device has a maximum on-resistance of 240mOhm at Vgs=10V and Id=8.4A, making it suitable for high-efficiency switching applications.
This MOSFET utilizes advanced process technology to achieve fast switching speeds and is fully avalanche rated with a single pulse avalanche energy of 180mJ. The gate charge is 54nC maximum at Vgs=10V, and input capacitance is 1060pF at Vds=25V. The operating junction temperature range is -55°C to 175°C, with a maximum power dissipation of 150W at 25°C case temperature.
The device is offered in a surface-mount D2PAK (TO-263) package, which provides low thermal resistance and is suitable for high current applications. It is RoHS3 compliant and lead-free (PbF suffix). The IRF644NSPBF is ideal for use in power supplies, DC-DC converters, and motor control circuits where high efficiency and reliability are required.
250V.
Surface mount D2PAK (TO-263) package.
-55°C to 175°C junction temperature.
Yes, RoHS3 compliant and lead-free.
14A at 25°C case temperature.
240mOhm maximum at Vgs=10V and Id=8.4A.
54nC maximum at Vgs=10V.