| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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550 pcs
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550 pcs | On Request | 1 | On Request | On Request | 17+ | On Request | On Request |
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The IRF644NS is a fifth-generation N-Channel Power MOSFET from Vishay Siliconix, utilizing advanced processing technology to achieve low on-resistance per silicon area. This device is designed for fast switching and is fully avalanche rated, providing rugged performance in demanding applications.
Key electrical specifications include a maximum drain-source voltage of 250V, a continuous drain current of 14A at 25°C case temperature, and a maximum on-resistance of 240 milliohms at 10V gate drive. The device features a total gate charge of 54 nC and an input capacitance of 1060 pF, enabling efficient switching at moderate frequencies.
The IRF644NS is offered in the D2PAK (TO-263) surface mount package, which provides high power dissipation capability up to 150W. It is suitable for high-current applications due to its low internal connection resistance. The device operates over a junction temperature range of -55°C to 175°C.
The maximum drain-source voltage (Vdss) is 250 V.
The continuous drain current is 14 A at a case temperature of 25 °C, and 9.9 A at 100 °C.
The maximum on-resistance (Rds on) is 240 milliohms at a drain current of 8.4 A and gate-source voltage of 10 V.
The operating junction temperature range is -55°C to 175°C.
The IRF644NS is supplied in the D2PAK (TO-263) surface mount package.
The IRF644NS is listed as RoHS3 compliant, though this is unverified.
The maximum total gate charge (Qg) is 54 nC at a gate-source voltage of 10 V.