| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
210 pcs
|
210 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Industrial Grade | |
| Medical Grade | |
| Military Grade | |
| Mounting Type | |
| Storage Temperature | |
| Tape & Reel |
The Vishay IRF644 is a third-generation N-Channel Power MOSFET. It is designed to provide a combination of fast switching, ruggedized device design, and low on-resistance. This MOSFET is suitable for commercial and industrial applications.
Key electrical characteristics include a drain-source breakdown voltage of 250V and a typical on-resistance of 0.28 Ohms at a gate-source voltage of 10V. The continuous drain current is rated at 14A at 25°C case temperature.
The TO-220AB package is commonly used for power dissipation levels up to approximately 50W. Its low thermal resistance and package cost contribute to its wide acceptance in the industry. The device features dynamic dV/dt rating and repetitive avalanche rating.
This MOSFET is compliant with RoHS Directive 2002/95/EC.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.71 | $0.71 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source breakdown voltage of the IRF644 is 250V.
The typical on-resistance of the IRF644 at VGS = 10V is 0.28 Ohms.
The continuous drain current for the IRF644 at 25°C is 14A.
The IRF644 is available in the TO-220AB package.
The RoHS status of the IRF644 is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) for the IRF644 is 1 Unlimited.
