| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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234 pcs
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234 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The IRF644 is a third-generation N-Channel power MOSFET from Vishay, designed for fast switching and rugged operation. It features a maximum drain-source voltage of 250V and continuous drain current of 14A at 25°C (8.5A at 100°C). The on-resistance is typically 280 mΩ at 8.4A and 10V gate drive, with a total gate charge of 68 nC. The device is avalanche rated with single pulse avalanche energy of 550 mJ and repetitive avalanche current of 14A. It also offers dynamic dV/dt capability up to 4.8 V/ns.
The MOSFET is housed in a TO-220AB (TO-220-3) through-hole package, suitable for power dissipation up to 125W at 25°C case temperature. It operates over a junction temperature range of -55°C to 150°C. RoHS-compliant versions are available, including lead-free (IRF644PbF) and halogen-free (IRF644PbF-BE3) options.
Typical applications include high-voltage switching power supplies, motor control, DC-DC converters, and industrial power systems. The device's fast switching and low on-resistance make it suitable for efficient power management.
250V maximum.
TO-220-3 (TO-220AB) through-hole package.
-55°C to 150°C (junction).
RoHS3 compliant versions are available, including lead-free (IRF644PbF) and halogen-free (IRF644PbF-BE3) options.
14A.
280 mΩ maximum at 8.4A and 10V gate drive.
68 nC maximum at 10V gate-source voltage.