Mfr Part #:

IRF644

The IRF644 is an N-Channel Power MOSFET from Harris Semiconductor, rated for 14A continuous drain current and 250V drain-source voltage with a low 0.28 Ohm on-resistance. It is housed in a TO-220AB package for through-hole mounting.

✓ Total Stock: 5,584 pcs

$ Price Range: $2.26

IRF644 Available from 2 distributors

✓ Authorised

✓ Non-Authorised

Distributor		Stock	Pricing	MOQ	PKG	Lead Time	Date Code	On Order Quantity	On Order Delivery
Components Technology Group, Inc. ✓ Non-Authorised Inventory information	5,000 pcs On Request	5000 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request
Tomark Electronics Ltd ✓ Non-Authorised Inventory information	584 pcs On Request	584 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request

IRF644 Description

Short technical summary and product information.

The IRF644 is an N-Channel Power MOSFET designed for high-efficiency power switching applications. It features a maximum drain-source voltage of 250V and a continuous drain current of 14A at 25°C case temperature. The device offers a low on-resistance of 0.28 Ohm at Vgs = 10V, minimizing conduction losses.

This MOSFET supports fast switching with a total gate charge of 68 nC, making it suitable for high-frequency power converters and motor control circuits. It includes repetitive avalanche rating and dynamic dV/dt capability for rugged operation in demanding environments.

The IRF644 is packaged in the industry-standard TO-220AB through-hole package, which provides low thermal resistance and ease of mounting on heatsinks. The device is rated for operation over a junction temperature range of -55°C to +150°C.

IRF644 Quick Information

Product Type: Power MOSFET

Canonical Name: IRF644 N-Channel Power MOSFET, 14A, 250V, 0.28 Ohm, TO-220AB

Subcategory: N-Channel MOSFET

IRF644 Compliance

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): 1 (Unlimited)

REACH Status: Non-Compliant

Lead Free: No

IRF644 Estimated Pricing

Qty	Low	High
133+	$2.26	$2.26

Estimated market price range - modelled values for guidance only, not live distributor offers.

IRF644 Features

14A continuous drain current rating.
250V maximum drain-source voltage.
0.28 Ohm low on-resistance at 10V gate drive.
TO-220AB through-hole package for easy mounting.
Fast switching with 68 nC total gate charge.

IRF644 Applications

Ideal for switching power supply circuits.
Used in motor control and drive applications.
Suitable for DC-DC converter designs.
Applicable in high-voltage power management systems.

IRF644 FAQs

6 frequently asked questions generated from this part’s specifications.

What is the maximum drain-source voltage of the IRF644?

The maximum drain-source voltage (Vds) is 250V.

What is the continuous drain current rating of the IRF644?

The continuous drain current is 14A at Tc = 25°C.

What is the on-resistance of the IRF644?

The maximum on-resistance is 0.28 Ohm at Id = 8.4A and Vgs = 10V.

What package does the IRF644 come in?

The IRF644 is available in a TO-220AB through-hole package.

What is the operating temperature range of the IRF644?

The operating junction temperature range is -55°C to +150°C.

Is the IRF644 RoHS compliant?

No, the IRF644 is not RoHS compliant due to lead (Pb) terminations.

Category	Transistors - FETs, MOSFETs - Single
Manufacturer Name	Harris Semiconductor
Current	14 A
Drain to Source Voltage (Vdss)	250 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	68 nC
Halogen Free	No
Industrial Grade	Yes
Input Capacitance (Ciss) (Max) @ Vds	1300 pF
Lead Style	Through Hole
Mounting Type	Through Hole
Operating Temperature	-55°C ~ 150°C (TJ)
Power Dissipation (Max)	125 W
Rds On (Max) @ Id, Vgs	280 mΩ
Supplier Device Package	TO-220AB
Technology	MOSFET (Metal Oxide)
Vgs (Max)	±20 V
Vgs(th) (Max) @ Id	4 V