| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,336 pcs
|
2336 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IRF643 is an N-Channel enhancement-mode power MOSFET designed for high-efficiency switching applications. It offers a drain-source voltage of 150V and continuous drain current of 16A at 25°C case temperature. The device features a maximum on-resistance of 220mOhm at 10V gate drive and 10A drain current. Gate threshold voltage is 4V maximum at 250µA. Total gate charge is 64nC at 10V, and input capacitance is 1275pF at 25V drain-source. The MOSFET is housed in a TO-220-3 through-hole package (TO-220AB), suitable for power dissipation up to 125W at 25°C case temperature. Operating junction temperature range is -55°C to 150°C. This device is suitable for switching power supplies, motor control, and other power management circuits.
| Qty | Low | High |
|---|---|---|
| 235+ | $1.27 | $1.27 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
150V.
16A at 25°C case temperature.
220mOhm maximum at 10A drain current and 10V gate drive.
4V maximum at 250µA drain current.
-55°C to 150°C junction temperature.
TO-220-3 (TO-220AB) through-hole package.
RoHS3 compliant (unverified).