| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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6,527 pcs
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6527 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The IRF641 from Samsung Electronics is an N-Channel MOSFET transistor designed for various electronic applications. This component features a high Drain-Source Voltage rating of 150V and a low Drain-Source On-Resistance of 180mΩ, making it suitable for power switching applications.
With a maximum power dissipation capability of 125W, the IRF641 can handle significant power loads. It operates at a maximum temperature of 150°C, ensuring reliability in demanding environments. The transistor is housed in a standard TO-220AB package, which is commonly used for through-hole mounting and facilitates heat dissipation.
This MOSFET is a reliable choice for engineers designing power supplies, motor control circuits, and other power management systems where efficient switching and robust performance are critical. Its specifications make it a versatile component for both industrial and consumer electronics.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The Drain-Source Voltage of the IRF641 is 150V.
The Drain-Source On-Resistance for the IRF641 is 180mΩ.
The maximum power dissipation of the IRF641 is 125W.
The maximum operating temperature for the IRF641 is 150°C.
The IRF641 is available in the TO-220AB package.
The RoHS status of the IRF641 is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) for the IRF641 is 1 Unlimited.