| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
505 pcs
|
505 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IRF640STRR is an N-Channel power MOSFET manufactured by Vishay Siliconix, designed for high-efficiency power switching applications. It offers a drain-source voltage (Vdss) of 200V and a continuous drain current of 18A at 25°C case temperature, making it suitable for medium-voltage power conversion.
The device features a maximum on-resistance of 180mOhm at 10V gate drive, ensuring low conduction losses. It is fully avalanche rated with a single pulse avalanche energy of 580mJ, providing robustness in inductive switching environments. The total gate charge is 70nC, enabling fast switching transitions.
The IRF640STRR is supplied in a D2PAK (TO-263) surface mount package, which offers excellent power dissipation of up to 130W at 25°C case temperature. The operating junction temperature range is -55°C to 150°C, supporting use in demanding thermal environments.
| Qty | Low | High |
|---|---|---|
| 800+ | $2.96 | $2.96 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source voltage (Vdss) is 200V.
The continuous drain current is 18A at 25°C case temperature.
The maximum on-resistance is 180mOhm at 11A drain current and 10V gate-source voltage.
The IRF640STRR is supplied in a D2PAK (TO-263) surface mount package.
The operating junction temperature range is -55°C to 150°C.
The maximum gate threshold voltage is 4V at 250µA drain current.
The maximum total gate charge is 70nC at 10V gate-source voltage.