IRF640STRLPBF N-Channel power MOSFET from Vishay Siliconix, rated for 200V drain-source voltage and 18A continuous drain current with 180mOhm on-resistance. Surface-mount D²PAK package.
Mfr Part #:

IRF640STRLPBF

Available from 1 distributors
Mfr Name: Vishay
Vishay
N-Channel power MOSFET from Vishay Siliconix, rated for 200V drain-source voltage and 18A continuous drain current with 180mOhm on-resistance. Surface-mount D²PAK package.
✓ Total Stock: 83 pcs
$ Price Range: $1.29 - $4.03

IRF640STRLPBF Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
83 pcs
83 pcs On Request 1 On Request On Request 0647/0542 On Request On Request

IRF640STRLPBF Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Lead Style
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Tape & Reel
Technology
Termination Style
Vgs (Max)
Vgs(th) (Max) @ Id

IRF640STRLPBF Description

Short technical summary and product information.

The IRF640STRLPBF is a third-generation N-Channel power MOSFET from Vishay Siliconix, designed for high-efficiency switching and ruggedness. It features a maximum drain-source voltage of 200V and continuous drain current of 18A at 25°C case temperature. The on-resistance is typically 180mOhm at Vgs=10V and Id=11A, ensuring low conduction losses.

 

This device is fully avalanche rated with a single pulse avalanche energy of 580mJ, and offers fast switching with a maximum gate charge of 70nC. It is suitable for applications requiring high power density and reliability. The operating junction temperature range is -55°C to 150°C.

 

The MOSFET comes in a surface-mount D²PAK (TO-263) package, which is ideal for high-current applications due to its low internal connection resistance. It is available in tape and reel packaging for automated assembly. The part is RoHS compliant and REACH unaffected, though these compliance claims are unverified.

IRF640STRLPBF Quick Information

Product Type: Power MOSFET
Series: IRF640S
Canonical Name: IRF640STRLPBF N-Channel Power MOSFET, 200V, 18A, 180mOhm, D²PAK (TO-263)
Subcategory: N-Channel Power MOSFET

IRF640STRLPBF Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

IRF640STRLPBF Estimated Pricing

Qty Low High
1+ $4.03 $4.03
10+ $2.64 $2.64
50+ $2.04 $2.04
100+ $1.85 $1.85
800+ $1.44 $1.44
2,400+ $1.29 $1.29

Estimated market price range - modelled values for guidance only, not live distributor offers.

IRF640STRLPBF Features

  • 200V drain-source voltage rating.
  • 18A continuous drain current at 25°C.
  • 180mOhm on-resistance at 10V gate drive.
  • Surface-mount D²PAK (TO-263) package.
  • Fully avalanche rated with 580mJ energy.

IRF640STRLPBF Applications

  • High-efficiency switch-mode power supplies.
  • DC-DC converters and motor drives.
  • Automotive and industrial power systems.
  • Power management in battery-powered devices.

IRF640STRLPBF FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage of the IRF640STRLPBF?

The maximum drain-source voltage (Vdss) is 200V.

What is the continuous drain current rating?

The continuous drain current is 18A at case temperature Tc=25°C, and 11A at Tc=100°C.

What is the on-resistance of this MOSFET?

The maximum on-resistance (Rds(on)) is 180mOhm at Vgs=10V and Id=11A.

What is the operating temperature range?

The junction operating temperature range is -55°C to 150°C.

What package is the IRF640STRLPBF available in?

It is available in a surface-mount D²PAK (TO-263) package. The package is also known as TO-263-3 or D²Pak (2 Leads + Tab).

Is the IRF640STRLPBF RoHS compliant?

It is indicated as RoHS3 compliant, but this compliance status is unverified and should be treated as low confidence.

What is the maximum gate charge (Qg) of this MOSFET?

The maximum total gate charge (Qg) is 70nC at Vgs=10V.

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