| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
700 pcs
|
700 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Lead Style | |
| Mounting Type | |
| Rds On (Max) @ Id, Vgs | |
| Storage Temperature | |
| Tape & Reel | |
| Technology | |
| Vgs(th) (Max) @ Id |
The IRF640STRL is an N-Channel enhancement-mode power MOSFET manufactured by Infineon Technologies using MOSFET (Metal Oxide) technology. It is designed for high-efficiency power switching applications.
Key electrical specifications include a drain-to-source voltage (Vdss) of 200V and a continuous drain current (Id) of 18A at 25°C case temperature. The device features a maximum on-resistance (Rds(on)) of 180mOhm at 11A drain current and 10V gate drive. The gate threshold voltage (Vgs(th)) is 4V maximum at 250µA drain current, and the maximum gate charge (Qg) is 70nC at 10V.
The IRF640STRL is supplied in a surface-mount TO-263 (D2PAK) package and is provided in tape and reel packaging for automated assembly. This component is suitable for power management circuits requiring high voltage and moderate current handling.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-to-source voltage (Vdss) is 200V.
The continuous drain current (Id) is 18A at 25°C case temperature.
The maximum on-resistance (Rds(on)) is 180mOhm at 11A drain current and 10V gate drive.
The IRF640STRL is supplied in a TO-263 (D2PAK) surface-mount package.
The maximum gate threshold voltage (Vgs(th)) is 4V at 250µA drain current.
The maximum gate charge (Qg) is 70nC at 10V gate-source voltage.