| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
221 pcs
|
221 pcs | On Request | 1 | On Request | On Request | N/A | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IRF640STRL is an N-Channel enhancement-mode power MOSFET manufactured by Vishay Siliconix. It is designed for high-efficiency power conversion and switching applications. Key electrical specifications include a maximum drain-source voltage (Vdss) of 200 V, a continuous drain current of 18 A at case temperature 25°C, and a typical on-resistance (Rds(on)) of 180 mOhm at Vgs=10V and Id=11A. The device features a gate threshold voltage (Vgs(th)) of 4V maximum at Id=250µA, and a total gate charge (Qg) of 70 nC at Vgs=10V for efficient switching. The MOSFET is fully avalanche rated, with a single pulse avalanche energy rating of 580 mJ. It is housed in a D2PAK (TO-263) surface-mount package, suitable for high-current board-level designs. The operating junction temperature range is -55°C to +150°C. This component is suitable for a variety of power management and switching regulator circuits.
| Qty | Low | High |
|---|---|---|
| 800+ | $2.96 | $2.96 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (Vdss) is 200 V.
The continuous drain current is 18 A at a case temperature of 25°C.
The maximum on-resistance (Rds(on)) is 180 mOhm at Vgs=10V and Id=11A.
It is offered in a D2PAK (TO-263) surface-mount package.
The operating junction temperature ranges from -55°C to +150°C.
The datasheet indicates the part is available in RoHS-compliant versions; the existing data shows a RoHS3 Compliant status, though this is unverified.
The maximum total gate charge (Qg) is 70 nC at Vgs=10V.