| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
11,020 pcs
|
11020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
865 pcs
|
865 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IRF640SPBF is an N-Channel power MOSFET from Vishay Siliconix, designed for high-efficiency switching applications. It features a drain-source breakdown voltage of 200V and a continuous drain current of 18A at 25°C case temperature, with a maximum on-resistance of 180mOhm at 10V gate drive. The device is fully avalanche rated with a single pulse avalanche energy of 580mJ, ensuring ruggedness in inductive switching environments.
Gate charge characteristics include a maximum total gate charge of 70nC at 10V, with typical gate-source charge of 13nC and gate-drain charge of 39nC, enabling fast switching transitions. Input capacitance is 1300pF at 25V drain-source voltage. The MOSFET is capable of operating over a junction temperature range of -55°C to 150°C, with a maximum power dissipation of 130W at case temperature 25°C.
Packaged in a surface-mount D2PAK (TO-263) package, the IRF640SPBF is suitable for high-current applications requiring low internal connection resistance. The package can dissipate up to 2.0W in typical surface mount applications. The device is RoHS compliant and available in tape and reel packaging for automated assembly.
| Qty | Low | High |
|---|---|---|
| 1+ | $4.03 | $4.03 |
| 10+ | $2.64 | $2.64 |
| 50+ | $2.04 | $2.04 |
| 100+ | $1.85 | $1.85 |
| 500+ | $1.51 | $1.51 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source breakdown voltage is 200V.
The continuous drain current is 18A at case temperature 25°C and 11A at 100°C.
The maximum on-resistance is 180 mOhm at a drain current of 11A and gate-source voltage of 10V.
The operating junction temperature range is -55°C to 150°C.
It is available in a surface-mount D2PAK (TO-263) package.
Yes, it is listed as RoHS3 compliant.
The maximum total gate charge is 70 nC at a gate-source voltage of 10V.